IRF510 Power MOSFET 100V/5,6A, TO220

Description

VDS (V)100
RDS(on) (Ohm)VGS = 10 V/ 0.54
Qg max. (nC)8.3
Qgs (nC)2.3
Qgd (nC)3.8
Configuration Single

Dynamic dV/dt rating
• Repetitive avalanche rated
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements