G30N60A4 IGBT Transistors 600V N-Channel, TO-247-3

5,84 Incl. Tax

Delivery: 2-4 days

2 in stock

SKU: G30N60A4 Category: Tag:


G30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications

Package/Case: TO-247-3
Mounting Style:Through Hole
Collector- Emitter Voltage VCEO Max:600 V
Collector-Emitter Saturation Voltage:1.8 V
Maximum Gate Emitter Voltage: /- 20 V
Continuous Collector Current at 25 C:75 A
Pd – Power Dissipation:463 W
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature: 150 C
Continuous Collector Current Ic Max:75 A

Height:20.82 mm Length:15.87 mm Width:4.82 mm
Continuous Collector Current: 75 A
Gate-Emitter Leakage Current: /- 250 nA

Additional information

Weight 0.01 kg

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