STB30NF10T4 N-Kanal, MOSFET transistor, 35 A 100 V, SMD

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Delivery: 2-4 days

2 in stock

SKU: STB30NF10T4 Category: Tag:

Description

Drain current continuous max. 35 A
Drain source voltage max. 100 V
Drain source resistor max. 0.045 Ω
Max. threshold voltage for port 4V
Minimum threshold voltage for port 2V
Gate source voltage max. ± 20 V
Enclosure Type D2PAK
Mounting Type Surface Mount
Benantal 3
Channel Form Enhancement
Category Effect MOSFET
Power consumption max. 115000 mW
Configuration Single
On-delay time typically 15 ns
Number of items per chip 1
Width 9.35mm
Turn off delay time typically 45 ns
Dimensions 10.4 x 9.35 x 4.6mm
Operating temperature max. 175 ° C
Height 4.6mm
Length 10.4mm
Input capacity at Vds typically 1180 pF at 25 V
Gate charge at Vgs typically 40 nC at 10 V
Operating temperature min. -55 ° C

Additional information

Weight 0.001 kg

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