Description
Technology: GaN
Mounting Style:Through Hole
Package/Case:TO-220-3
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Vds – Drain-Source Breakdown Voltage:200 V
Id – Continuous Drain Current:7 A
Rds On – Drain-Source Resistance:400 mOhms
Vgs – Gate-Source Voltage:20 V
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature: 150 C
Configuration:Single
Pd – Power Dissipation:40 W
