Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET ® Power MOSFETsutilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
MOSFET, N, 55V, 169A, TO-220
Transistor Polarity:N Channel
Continuous Drain Current Id:169A
Drain Source Voltage Vds:55V
On Resistance Rds(on):5.3mohm
Rds(on) Test Voltage Vgs:10V
