Description
New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dtrated
• Ultra low effective capacitances
• Improved transconductance
Package/Case: TO-247-3
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Vds – Drain-Source Breakdown Voltage:600 V
Id – Continuous Drain Current:20 A
Rds On – Drain-Source Resistance:190 mOhms
Vgs – Gate-Source Voltage:20 V
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature: 150 C
Configuration:Single
Pd – Power Dissipation:208 W
