Description
This Power Mosfet series realized with STMicro-electronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 1550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 35 mOhm @ 17.5A, 10V
Temperature Range – Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
