Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
TRANSISTOR, IRF9530N, P CHANNEL POWER MOSFET, 100V, 14A, TO-220AB
Family IRF9530
Category Power MOSFET
Configuration Single
Maximum Continuous Forward Current -12A
Maximum Power Dissipation 79000mW
Number of Elements per Chip 1
Peak Forward Voltage -100VDC
Output Power 88W
Peak Non-Repetitive Surge Current -48A
Peak Reverse Current -25uA
Channel Mode P-Channel Enhancement
Peak Reverse Recovery Time 52ns
Channel Type P
Peak Reverse Repetitive Voltage -100VDC
Maximum Continuous Drain Current 14A
Maximum Drain Source Resistance 0.2 Ohms@10V
Maximum Drain Source Voltage 100V
Maximum Gate Source Voltage ±20V
Typical Fall Time 46ns
Typical Gate Charge @ Vgs 58nC @10V
Typical Input Capacitance @ Vds 760pF@25V
Typical Rise Time 58ns
Typical Turn-Off Delay Time 45ns
Typical Turn-On Delay Time 15ns
Minimum Operating Temperature -55°C
Maximum Operating Temperature 175°C
Mounting Through Hole
